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| OPA2333-HT Datasheet, PDF (7/23 Pages) Texas Instruments – 1.8-V MICROPOWER CMOS OPERATIONAL AMPLIFIER ZERO-DRIFT SERIES | |||
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www.ti.com
1000000
OPA2333-HT
SBOS483F â JULY 2009 â REVISED AUGUST 2012
100000
10000
Wirebond Fail Mode
Electromigration Fail Mode
1000
110 120 130 140 150 160 170 180 190 200 210
Continuous TJ (°C)
(1) See datasheet for absolute maximum and minimum recommended operating conditions.
(2) Silicon operating life design goal is 10 years at 105°C junction temperature (does not include package interconnect
life).
(3) The predicted operating lifetime vs. junction temperature is based on reliability modeling using electromigration as the
dominant failure mechanism affecting device wearout for the specific device process and design characteristics.
(4) Wirebond fail mode applicable for D package only.
Figure 1. OPA2333SKGD1/OPA2333HD Operating Life Derating Chart
Copyright © 2009â2012, Texas Instruments Incorporated
Product Folder Links: OPA2333-HT
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