MSP430FR5972 Datasheet, PDF (55/142 Pages) Texas Instruments – Mixed‑Signal Microcontrollers

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MSP430FR5972, MSP430FR59721, MSP430FR5970, MSP430FR5922, MSP430FR59221
MSP430FR5872, MSP430FR58721, MSP430FR5870
SLASE66A – APRIL 2015 – REVISED MAY 2015
5.12.11 FRAM Controller
Table 5-34. FRAM Memory
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
PARAMETER
Read and write endurance
TEST
CONDITIONS
MIN
10¹⁵
TYP MAX UNIT
cycles
t_Retention Data retention duration
I_WRITE
I_ERASE
t_WRITE
t_READ
Current to write into FRAM
Erase current
Write time
Read time, NWAITSx=0
Read time, NWAITSx=1
T_J = 25°C
T_J = 70°C
T_J = 85°C
100
40
10
I_READ ⁽¹⁾
N/A ⁽²⁾
t_READ ⁽³⁾
1/f_SYSTEM ⁽⁴⁾
2/f_SYSTEM ⁽⁴⁾
years
nA
nA
ns
ns
ns
(1) Writing to FRAM does not require a setup sequence or additional power when compared to reading from FRAM. The FRAM read
current I_READ is included in the active mode current consumption numbers I_AM,FRAM.
(2) N/A = not applicable. FRAM does not require a special erase sequence.
(3) Writing into FRAM is as fast as reading.
(4) The maximum read (and write) speed is specified by f_SYSTEM using the appropriate wait state settings (NWAITSx).
Copyright © 2015, Texas Instruments Incorporated
Specifications
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