AMC1304L05-Q1 Datasheet, PDF (5/39 Pages) Texas Instruments – High-Precision, Reinforced Isolated Delta-Sigma Modulators with LDO

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7 Specifications
AMC1304L05-Q1, AMC1304L25-Q1, AMC1304M05-Q1, AMC1304M25-Q1
SBAS799 – FEBRUARY 2017
7.1 Absolute Maximum Ratings
over the operating ambient temperature range (unless otherwise noted)⁽¹⁾
MIN
Supply voltage
DVDD to DGND
–0.3
LDO input voltage
LDOIN to AGND
–0.3
Analog input voltage at AINP, AINN
AGND – 6
Digital input voltage at CLKIN, CLKIN_N
DGND – 0.3
Input current to any pin except supply pins
–10
Junction temperature, T_J
Storage temperature, T_stg
–65
MAX
6.5
26
3.7
DVDD + 0.3
10
150
150
UNIT
V
V
V
V
mA
°C
°C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, and do not imply functional operation of the device at these or any other conditions beyond those indicated. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability.
7.2 ESD Ratings
V_(ESD) Electrostatic discharge
Human body model (HBM), per AEC Q100-002⁽¹⁾
Charged device model (CDM), per AEC Q100-011
VALUE
±2500
±1000
(1) AEC Q100-002 indicates HBM stressing is done in accordance with the ANSI/ESDA/JEDEC JS-001 specification.
UNIT
V
7.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
LDOIN
LDO input supply voltage (LDOIN pin)
4.0
DVDD
Digital (controller-side) supply voltage (DVDD pin)
3.0
T_A
Operating ambient temperature range
–40
NOM
15.0
3.3
MAX
18.0
5.5
125
UNIT
V
V
°C
7.4 Thermal Information
THERMAL METRIC ⁽¹⁾
AMC1304x-Q1
DW (SOIC)
UNIT
16 PINS
R_θJA
R_θJC(top)
R_θJB
ψ_JT
ψ_JB
R_θJC(bot)
Junction-to-ambient thermal resistance
Junction-to-case (top) thermal resistance
Junction-to-board thermal resistance
Junction-to-top characterization parameter
Junction-to-board characterization parameter
Junction-to-case (bottom) thermal resistance
80.2
°C/W
40.5
°C/W
45.1
°C/W
11.9
°C/W
44.5
°C/W
n/a
°C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
7.5 Power Ratings
PARAMETER
P_D
Maximum power dissipation (both sides)
P_D1 Maximum power dissipation (high-side supply)
P_D2 Maximum power dissipation (low-side supply)
TEST CONDITIONS
LDOIN = 18 V, DVDD = 5.5 V
LDOIN = 18 V
DVDD = 5.5 V, LVDS, R_LOAD = 100 Ω
VALUE
161
117
44
UNIT
mW
mW
mW
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