LMH7324_14 Datasheet, PDF (2/30 Pages) Texas Instruments – Quad 700 ps High Speed Comparator with RSPECL Outputs

LMH7324
SNOSAZ2F – SEPTEMBER 2007 – REVISED JULY 2010
www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Absolute Maximum Ratings⁽¹⁾
ESD Tolerance ⁽²⁾
Human Body Model
Machine Model
Output Short Circuit Duration
Supply Voltages (V_CCx –V_EE)
Voltage at Input/Output Pins
Soldering Information
Infrared or Convection (20 sec.)
Wave Soldering (10 sec.)
Storage Temperature Range
Junction Temperature ⁽³⁾
2.5 kV
250V
See ^{(3) (4)}
13.2V
±13V
235°C
260°C
−65°C to +150°C
+150°C
(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Conditions indicate specifications
for which the device is intended to be functional, but specific performance is not ensured. For ensured specifications and the test
conditions, see the Electrical Characteristics.
(2) Human Body Model, applicable std. MIL-STD-883, Method 3015.7. Machine Model, applicable std. JESD22-A115-A (ESD MM std. of
JEDEC)Field-Induced Charge-Device Model, applicable std. JESD22-C101-C (ESD FICDM std. of JEDEC)
(3) The maximum power dissipation is a function of T_J(MAX), θ_JA. The maximum allowable power dissipation at any ambient temperature is
P_D = (T_J(MAX) – T_A)/ θ_JA. All numbers apply for packages soldered directly onto a PC Board.
(4) Applies to both single-supply and split-supply operation. Continuous short circuit operation at elevated ambient temperature can result in
exceeding the maximum allowed junction temperature of 150°C.
Operating Ratings⁽¹⁾
Supply Voltage (V_CCx – V_EE)
Temperature Range
Package Thermal Resistance
32-Pin WQFN
5V to 12V
−40°C to +125°C
36°C/W
(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Conditions indicate specifications
for which the device is intended to be functional, but specific performance is not ensured. For ensured specifications and the test
conditions, see the Electrical Characteristics.
12V DC Electrical Characteristics
Unless otherwise specified, all limits are ensured for T_J = 25°C. V_CCI = V_CCO = 12V, V_EE = 0V, R_L = 50Ω to V_CCO-2V, V_CM = 300
mV. ⁽¹⁾
Symbol Parameter
Conditions
Min ⁽²⁾
Typ ⁽³⁾
Max ⁽²⁾
Units
Input Characteristics
I_B
Input Bias Current ⁽⁴⁾
I_OS
TC I_OS
Input Offset Current
Input Offset Current TC ⁽⁵⁾
V_OS
TC V_OS
Input Offset Voltage
Input Offset Voltage TC ⁽⁵⁾
V_RI
Input Voltage Range
V_IN Differential = 0V
V_IN Differential = 0V
V_IN Differential = 0V
V_CM = 0V
V_CM = 0V
CMRR > 50 dB
−5
−250
−9.5
V_EE
−2.5
40
0.15
7
250
+9.5
V_CCI−2
µA
nA
nA/°C
mV
μV/°C
V
(1) Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very
limited self-heating of the device such that T_J = T_A. No specification of parametric performance is indicated in the electrical tables under
conditions of internal self heating where T_J > T_A.
(2) All limits are specified by testing or statistical analysis.
(3) Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary
over time and will also depend on the application and configuration. The typical values are not tested and are not guaranteed on
shipped production material.
(4) Positive current corresponds to current flowing into the device.
(5) Average Temperature Coefficient is determined by dividing the change in a parameter at temperature extremes by the total temperature
change.
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