OMAP3515_15 Datasheet, PDF (120/264 Pages) Texas Instruments – OMAP3515 and OMAP3503 Applications Processors

OMAP3515, OMAP3503
SPRS505H – FEBRUARY 2008 – REVISED OCTOBER 2013
www.ti.com
3.2 Absolute Maximum Ratings
The following table specifies the absolute maximum ratings over the operating junction temperature range
of OMAP commercial and extended temperature devices. Stresses beyond those listed under absolute
maximum ratings may cause permanent damage to the device. These are stress ratings only and
functional operation of the device at these or any other conditions beyond those indicated under
recommended operating conditions is not implied. Exposure to absolute-maximum-rated conditions for
extended periods may affect device reliability.
Notes:
• Logic functions and parameter values are not assured out of the range specified in the recommended
operating conditions.
• The OMAP3515/03 device adheres to EIA/JESD22−A114, Electrostatic Discharge (ESD) Sensitivity
Testing Human Body Model (HBM). Minimum pass level for HBM is ±1 kV.
Table 3-1. Absolute Maximum Ratings Over Operating Junction Temperature Range
PARAMETER
MIN
MAX
UNIT
vdd_mpu
vdd_core
Supply voltage range for core macros
–0.5
1.6
V
vdds
vdds_mem
Second supply voltage range for 1.8-V I/O macros
–0.5
2.25
V
vdds_mmc1
Supply voltage range for MMC1 CMD,
CLK and DAT[3:0] and for memory stick
I/Os
1.8-V mode
3.0-V mode
–0.5
2.45
V
-0.5
3.50
vdds_
vdds_mmc1a
Second supply voltage range for MMC1
DAT[7:4]
1.8-V mode
3.0-V mode
–0.5
2.45
V
-0.5
3.50
vdds_dpll_dll Supply voltage for DLL DPLL
vdds_dpll_per Supply voltage for Per DPLL
–0.5
2.10
V
vdds_sram
Supply voltage for SRAM LDOs
vdds_wkup_bg Supply voltage for wakeup LDO and VDDA (2 LDOs SRAM and BG)
–0.5
2.25
V
V_PAD
Voltage range
at PAD
MMC1, MS (Balls N28,
M27, N27, N26, N25,
P28)
MMC1 (Balls P27, P26,
R27, R25)
Supply voltage range for 1.8-V IOs
Supply voltage range for 3.0-V IOs
–0.54 ⁽¹⁾
–0.45 ⁽²⁾
2.34 ⁽¹⁾
3.45 ⁽²⁾
I2C1, I2C2, I2C3, I2C4 (Balls K21, J21, AF15, AE15, AF14,
AG14, AD26, AE26)
–0.63 ⁽¹⁾
2.73 ⁽¹⁾
Crystal (xtalin/xtalout) (Balls AE17, AF17)
Other balls
–0.5
–0.5
2.71
vddsx⁽³⁾ + 0.5
vdda_dac
Supply voltage range for analog macros
–0.5
2.43
V
V_ESD
ESD stress
voltage ⁽⁴⁾
HBM (human body
model) ⁽⁵⁾
vdds_ MMC1a,
mmc1_dat[7-4] (CBB pkg only)⁽⁶⁾
500
V
I_IOI
I_clamp
T_stg
CDM (charged device
model) ⁽⁷⁾
Current-pulse injection on each I/O pin⁽⁸⁾
Other pins
MMC1 signals (CBB pkg only) ⁽⁶⁾
Other pins
Clamp current for an input or output
–20
Storage temperature range⁽⁹⁾
–65
1000
300
500
200
mA
20
mA
150
°C
(1) For a maximum time of 30% time period.
(2) For a maximum time of 15% time period.
(3) Depending on ball, vddsx can be vdds_mem or vdds.
(4) Electrostatic discharge (ESD) to measure device sensitivity/immunity to damage caused by electrostatic discharges into the device.
(5) JEDEC JESD22–A114F
(6) Corresponding signals: mmc1_dat0, mmc1_dat1, mmc1_dat2, mmc1_dat3, mmc1_dat4, mmc1_dat5, mmc1_dat6, mmc1_dat7,
mmc1_clk, mmc1_cmd and vdds_mmc1 (CBB pkg only).
(7) JEDEC JESD22−C101D
(8) Each device is tested with I/O pin injection of 200 mA with a stress voltage of 1.5 times maximum vdd at room temperature.
(9) These temperatures extreme do not simulate actual operating conditions but exaggerate any faults that might exist.
120 ELECTRICAL CHARACTERISTICS
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