BQ40Z60_16 Datasheet, PDF (12/47 Pages) Texas Instruments – Programmable Battery Management Unit

bq40z60
SLUSAW3C – DECEMBER 2014 – REVISED JULY 2015
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8.25 Voltage Reference 2
Typical values stated where T_A = 25°C and VCC = 10.8 V, Min/Max values stated where T_A = –40°C to 85°C and VCC =
2.2 V to 26 V (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN TYP
MAX UNIT
V_REF2
Internal reference
voltage
T_A = 25°C, after trim
1.22 1.225
1.23 V
V_REF2(DRIFT)
Internal reference
voltage drift
T_A = 0°C to 60°C, after trim
T_A = –40°C to 85°C, after trim
±50
PPM/°C
±80
8.26 Instruction Flash
Typical values stated where T_A = 25°C and VCC = 10.8 V, Min/Max values stated where T_A = –40°C to 85°C and VCC =
2.2 V to 26 V (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN TYP
MAX UNIT
Data retention
10
Years
Flash programming
write cycles
1000
Cycles
t_PROGWORD
Word programming
time
T_A = –40°C to 85°C
40 µs
t_MASSERASE
t_PAGEERASE
I_FLASHREAD
I_FLASHWRITE
I_FLASHERASE
Mass-erase time
Page-erase time
Flash-read current
Flash-write current
Flash-erase current
T_A = –40°C to 85°C
T_A = –40°C to 85°C
T_A = –40°C to 85°C
T_A = –40°C to 85°C
T_A = –40°C to 85°C
40 ms
40 ms
2 mA
5 mA
15 mA
8.27 Data Flash
Typical values stated where T_A = 25°C and VCC = 10.8 V, Min/Max values stated where T_A = –40°C to 85°C and VCC =
2.2 V to 26 V (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN TYP
MAX UNIT
Data retention
10
Years
Flash programming
write cycles
20000
Cycles
t_PROGWORD
Word programming
time
T_A = –40°C to 85°C
40 µs
t_MASSERASE
t_PAGEERASE
I_FLASHREAD
I_FLASHWRITE
I_FLASHERASE
Mass-erase time
Page-erase time
Flash-read current
Flash-write current
Flash-erase current
T_A = –40°C to 85°C
T_A = –40°C to 85°C
T_A = –40°C to 85°C
T_A = –40°C to 85°C
T_A = –40°C to 85°C
40 ms
40 ms
1 mA
5 mA
15 mA
8.28 Current Protection Thresholds
Typical values stated where T_A = 25°C and VCC = 10.8 V, Min/Max values stated where T_A = –40°C to 85°C and VCC =
2.2 V to 26 V (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN TYP
MAX UNIT
V_OCD
OCD detection
threshold voltage
range
V_OCD = V_SRP – V_SRN, PROTECTION_CONTROL[RSNS] = 1
V_OCD = V_SRP – V_SRN, PROTECTION_CONTROL[RSNS] = 0
–16.6
–8.3
–100
mV
–50
ΔV_OCD
OCD detection
threshold voltage
program step
V_OCD = V_SRP – V_SRN, PROTECTION_CONTROL[RSNS] = 1
V_OCD = V_SRP – V_SRN, PROTECTION_CONTROL[RSNS] = 0
–5.56
mV
–2.78
V_SCC
SCC detection
threshold voltage
range
V_SCC = V_SRP – V_SRN, PROTECTION_CONTROL[RSNS] = 1
V_SCC = V_SRP – V_SRN, PROTECTION_CONTROL[RSNS] = 0
44.4
22.2
200
mV
100
12
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