LPV521_15 Datasheet, PDF (7/33 Pages) Texas Instruments – LPV521 NanoPower, 1.8-V, RRIO, CMOS Input, Operational Amplifier

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LPV521
SNOSB14D – AUGUST 2009 – REVISED DECEMBER 2014
6.8 3.3-V AC Electrical Characteristics
Unless otherwise is specified, all limits for T_A = 25°C, V⁺ = 3.3 V, V^− = 0 V, V_CM = V_O = V⁺/2, and R_L > 1 MΩ.⁽¹⁾
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
GBW
SR
Gain-Bandwidth Product
Slew Rate
C_L = 20 pF, R_L = 100 kΩ
A_V = +1,
V_IN = 0V to 3.3V
Falling Edge
Rising Edge
6.2
kHz
2.9
V/ms
2.5
θ_m
Phase Margin
C_L = 20 pF, R_L = 10 kΩ
G_m
Gain Margin
C_L = 20 pF, R_L = 10 kΩ
e_n
Input-Referred Voltage Noise Density f = 100 Hz
Input-Referred Voltage Noise
0.1 Hz to 10 Hz
I_n
Input-Referred Current Noise
f = 100 Hz
73
deg
19
dB
259
nV/√Hz
22
μV_PP
100
fA/√Hz
(1) Electrical Characteristics values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in
very limited self-heating of the device such that TJ = TA. No guarantee of parametric performance is indicated in the electrical tables
under conditions of internal self-heating where TJ TA. Absolute Maximum Ratings indicate junction temperature limits beyond which the
device may be permanently degraded, either mechanically or electrically.
6.9 5-V DC Electrical Characteristics
Unless otherwise specified, all limits for T_A = 25°C, V⁺ = 5 V, V^− = 0 V, V_CM = V_O = V⁺/2, and R_L > 1 MΩ.⁽¹⁾
PARAMETER
TEST CONDITIONS
MIN
TYP
V_OS
Input Offset Voltage
V_CM = 0.3 V
Temperature extremes
0.1
–1.23
TCV_OS
Input Offset Voltage Drift⁽²⁾
V_CM = 4.7 V
Temperature extremes
Temperature extremes
0.1
–1.23
±0.4
–3.5
I_BIAS
Input Bias Current
Temperature extremes
0.04
–50
I_OS
CMRR
Input Offset Current
Common Mode Rejection Ratio
0 V ≤ V_CM ≤ 5.0 V
Temperature extremes
60
75
102
74
0 V ≤ V_CM ≤ 3.9 V
Temperature extremes
84
108
80
77
115
PSRR
Power Supply Rejection Ratio
Temperature extremes
1.6 V ≤ V⁺ ≤ 5.5 V
V_CM = 0.3 V
Temperature extremes
76
85
109
76
CMVR
Common Mode Voltage Range
CMRR ≥ 75 dB
−0.1
CMRR ≥ 74 dB
Temperature extremes
0
A_VOL
Large Signal Voltage Gain
V_O = 0.5 V to 4.5 V
R_L = 100 kΩ to V⁺/2
Temperature extremes
84
132
76
MAX
±1
1.23
±1
1.23
3.5
±1
50
5.1
5
UNIT
mV
μV/°C
pA
fA
dB
dB
V
dB
(1) Electrical Characteristics values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in
very limited self-heating of the device such that TJ = TA. No guarantee of parametric performance is indicated in the electrical tables
under conditions of internal self-heating where TJ TA. Absolute Maximum Ratings indicate junction temperature limits beyond which the
device may be permanently degraded, either mechanically or electrically.
(2) The offset voltage average drift is determined by dividing the change in VOS at the temperature extremes by the total temperature
change.
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