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LPV521_15 Datasheet, PDF (5/33 Pages) Texas Instruments – LPV521 NanoPower, 1.8-V, RRIO, CMOS Input, Operational Amplifier
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LPV521
SNOSB14D – AUGUST 2009 – REVISED DECEMBER 2014
1.8-V DC Electrical Characteristics (continued)
Unless otherwise specified, all limits for TA = 25°C, V+ = 1.8 V, V− = 0 V, VCM = VO = V+/2, and RL > 1 MΩ.(1)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
VO
Output Swing High
RL = 100 kΩ to V+/2
VIN(diff) = 100 mV
2
50
Temperature extremes
50
Output Swing Low
RL = 100 kΩ to V+/2
VIN(diff) = −100 mV
2
50
Temperature extremes
50
IO
Sourcing, VO to V–
VIN(diff) = 100 mV
1
3
Output Current(3)
Temperature extremes
Sinking, VO to V+
VIN(diff) = −100 mV
0.5
1
3
Temperature extremes
0.5
IS
Supply Current
VCM = 0.3 V
Temperature extremes
345
400
580
VCM = 1.5 V
Temperature extremes
472
600
850
UNIT
mV from
either rail
mA
nA
(3) The short circuit test is a momentary open-loop test.
6.6 1.8-V AC Electrical Characteristics
Unless otherwise specified, all limits for TA = 25°C, V+ = 1.8 V, V− = 0 V, VCM = VO = V+/2, and RL > 1 MΩ.(1)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
GBW
SR
Gain-Bandwidth Product
Slew Rate
CL = 20 pF, RL = 100 kΩ
AV = +1,
VIN = 0V to 1.8V
Falling Edge
Rising Edge
6.1
kHz
2.9
V/ms
2.3
θm
Phase Margin
CL = 20 pF, RL = 100 kΩ
Gm
Gain Margin
CL = 20 pF, RL = 100 kΩ
en
Input-Referred Voltage Noise Density f = 100 Hz
Input-Referred Voltage Noise
0.1 Hz to 10 Hz
In
Input-Referred Current Noise
f = 100 Hz
72
deg
19
dB
265
nV/√Hz
24
μVPP
100
fA/√Hz
(1) Electrical Characteristics values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in
very limited self-heating of the device such that TJ = TA. No guarantee of parametric performance is indicated in the electrical tables
under conditions of internal self-heating where TJ TA. Absolute Maximum Ratings indicate junction temperature limits beyond which the
device may be permanently degraded, either mechanically or electrically.
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