GTL2010 Datasheet, PDF (5/15 Pages) NXP Semiconductors – 10-bit GTL Processor Voltage Clamp

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GTL2010
10-BIT BIDIRECTIONAL LOW-VOLTAGE TRANSLATOR
SCDS221 – SEPTEMBER 2006
Electrical Characteristics
over recommended operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN TYP⁽¹⁾ MAX UNIT
V_OL
V_IK
I_IH
C_I(GREF)
C_IO(OFF)
C_IO(ON)
Low-level output voltage
Input clamp voltage
Gate input leakage
Gate capacitance
OFF capacitance
ON capacitance
r_on ⁽²⁾
ON-state resistance
V_DD = 3 V, V_SREF = 1.365 V, V_Sn or V_Dn = 0.175 V,
I_clamp = 15.2 mA
I_I = –18 mA,
V_GREF = 0 V
V_I = 5 V,
V_GREF = 0 V
V_I = 3 V or 0 V
V_O = 3 V or 0 V,
V_GREF = 0 V
V_O = 3 V or 0 V,
V_GREF = 3 V
V_GREF = 4.5 V
V_I = 0 V
V_GREF = 3 V
V_GREF = 2.3 V
I_O = 64 mA
V_GREF = 1.5 V
V_GREF = 1.5 V,
I_O = 30 mA
V_I = 2.4 V
V_GREF = 4.5 V
V_GREF = 3 V
I_O = 15 mA
V_I = 1.7 V
V_GREF = 2.3 V
260 350 mV
–1.2 V
5 µA
56
pF
7.4
pF
18.6
pF
3.5
5
4.4
7
5.5
9
67 105
Ω
9
15
7
10
58
80
50
70
(1) All typical values are measured at T_amb = 25°C.
(2) Measured by the voltage drop between the Sn and the Dn terminals at the indicated current through the switch. On-state resistance is
determined by the lowest voltage of the two (Sn or Dn) terminals.
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