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DRV3204-Q1_15 Datasheet, PDF (18/38 Pages) Texas Instruments – Three-Phase Brushless Motor Driver
DRV3204-Q1
SLVSBT3B – MARCH 2013 – REVISED JULY 2013
www.ti.com
Table 4. Charge-Pump Electrical Characteristics (continued)
VchvUV
tchv (1)
Ron
PARAMETER
Undervoltage detection threshold
Rise time
On-resistance, S1-S4
CONDITIONS
VB = 5.3 V, C1 = C2 = 47 nF, CCP = 2.2 µF,
R1 = R2 = 0 Ω, Vchv, UV released
See Figure 10
MIN TYP
VB+4 VB+4.5
1
8
(1) Specified by design
MAX
VB+5
UNITS
V
2
ms
Ω
Pre-Driver
Description:
The pre-driver block provides three high-side pre-drivers and three low-side pre-drivers to drive external N-
channel MOSFETs. The turnon side of the high-side pre-drivers supplies the large N-channel transistor current
for quick charge, and PMOS supports output voltages up to PDCPV. The turnoff side of the high-side pre-drivers
supplies the large N-channel transistor current for quick discharge. The low-side pre-drivers supply the large N-
channel transistor current for charge and discharge. VCP12 (created by a charge pump) controls the output
voltage of the low-side pre-driver to output less than 18 V. The pre-driver has a stop condition in some fault
conditions ( Fault Detection ) and SPI set ( Serial Port I/F ).
High Side Pre Driver
PDCPV
CTLxH
H : PU on
L : PD on
PD CTRL
UH/V
H/WH
RL
CL
UHS/
VHS/
WHS
Low Side Pre Driver
CTLxL
H : PU on
L : PD on
PD CTRL
VCP12
LVS
PDCPV
UL/VL
/WL
RL
CL
NGND
Figure 11. Pre-Driver Block Diagram
18
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