OMAP3530_08 Datasheet, PDF (121/264 Pages) Texas Instruments – Applications Processor

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OMAP3530/25 Applications Processor
SPRS507B – FEBRUARY 2008 – REVISED JULY 2008
3.2 Absolute Maximum Ratings
The following table specifies the absolute maximum ratings over the operating junction temperature range
of OMAP commercial and extended temperature devices. Stresses beyond those listed under absolute
maximum ratings may cause permanent damage to the device. These are stress ratings only and
functional operation of the device at these or any other conditions beyond those indicated under
recommended operating conditions is not implied. Exposure to absolute-maximum-rated conditions for
extended periods may affect device reliability.
Notes:
• Logic functions and parameter values are not assured out of the range specified in the recommended
operating conditions.
• The OMAP3530/25 device adheres to EIA/JESD22–A114, Electrostatic Discharge (ESD) Sensitivity
Testing Human Body Model (HBM). Minimum pass level for HBM is ±2 kV.
Table 3-1. Absolute Maximum Ratings Over Operating Junction Temperature Range
vdd_mpu_iva
vdd_core
vdds
vdds_mem
vdds_mmc1
vdds_mmc1a
vdds_dsi
vdds_sdi
vdds_csi2
vdds_csib
vdds_dpll_dll
vdds_dpll_per
vdds_sram
vdds_wkup_bg
V_PAD
vdda_dac
V_ESD
I_IOI
I_clamp
PARAMETER
Supply voltage range for core macros
Second supply voltage range for 1.8-V I/O macros
Second supply voltage range for 1.8-V IOs
Second supply voltage range for 3.0-V IOs
Supply voltage for DSI
Supply voltage for SDI
Supply voltage for CSI2
Supply voltage for CSIb
Supply voltage for DLL DPLL
Supply voltage for Per DPLL
Supply voltage for SRAM LDOs
Supply voltage for wakeup LDO and VDDA (2 LDOs SRAM and BG)
Voltage range
at PAD
CSIb (Balls K28, L28, K27, L27)
CSI2 (Balls AG17, AH17, AG19, AH19, AG18, AH18)
DSI (Balls AG22, AH22, AG23, AH23, AG24, AH24)
SDI (Balls AD28, AD27, AB28, AB27, AA28, AA27, AC27,
AC28)
MMC1, MS (Balls N28, M27, N27,
N26, N25, P28)
MMC1, SIM (Balls P27, P26, R27,
R25)
Supply voltage range
for 1.8-V IOs
Supply voltage range
for 3.0-V IOs
I2C1, I2C2, I2C3, I2C4 (Balls K21, J21, AF15, AE15, AF14,
AG14, AD26, AE26)
Crystal (xtalin/xtalout) (Balls AE17, AF17)
Other balls
Supply voltage range for analog macros
ESD stress
voltage ⁽⁵⁾
HBM (human body model)⁽⁶⁾
CDM (charged device model)⁽⁷⁾
Current-pulse injection on each I/O pin⁽⁸⁾
Clamp current for an input or output
MIN
–0.5
–0.5
–0.5
–0.5
–0.5 ⁽¹⁾
MAX
1.6
2.25
2.45
3.50
2.10 ⁽¹⁾
–0.5
–0.5
–0.5 ⁽¹⁾
2.10
2.25
2.10 ⁽¹⁾
–0.54 ⁽²⁾
–0.45 ⁽³⁾
–0.63 ⁽²⁾
2.34 ⁽²⁾
3.45 ⁽³⁾
2.73 ⁽²⁾
–0.5
–0.5
2.71
vddsx⁽⁴⁾ + 0.5
–0.5
2.43
2000
500
200
–20
20
UNIT
V
V
V
V
V
V
V
V
V
mA
mA
(1) To be confirmed.
(2) For a maximum time of 30% time period.
(3) For a maximum time of 15% time period.
(4) ) Depending on ball, vddsx can be vdds_mem or vdds.
(5) Electrostatic discharge (ESD) to measure device sensitivity/immunity to damage caused by electrostatic discharges into the device.
(6) JEDEC JESD22–A114 D with the following exception-no connect pins are not stressed. 2000V Human Body Model (HBM)
(7) JEDEC JESD22–C101C with the following exception-split out pin groupings to eliminate cumulative stress effect
(8) Each device is tested with I/O pin injection of 200 mA with a stress voltage of 1.5 times maximum vdd at room temperature.
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