71M6511 Datasheet, PDF (89/95 Pages) Teridian Semiconductor Corporation – Single-Phase Energy Meter IC

RAM AND FLASH MEMORY
PARAMETER
CE RAM wait states
Flash write cycles
Flash data retention
Flash data retention
Flash byte writes between page or mass
erase operations
71M6511/71M6511H
Single-Phase Energy Meter IC
DATA SHEET
AUGUST 2007
CONDITION
CKMPU = 4.9MHz
CKMPU = 1.25MHz
-40°C to +85°C
85°C
25°C
MIN
TYP
5
2
20,000
10
100
MAX
2
UNIT
Cycles
Cycles
Cycles
Years
Years
Cycles
FLASH MEMORY TIMING
PARAMETER
Write Time per Byte
Page Erase (512 bytes)
Mass Erase
Flash byte writes between page or mass
erase operations
CONDITION
MIN
TYP
MAX UNIT
42
µs
20
ms
200
ms
2
Cycles
EEPROM INTERFACE
PARAMETER
Write Clock frequency
CONDITION
CKMPU=4.9MHz, Using
interrupts
CKMPU=4.9MHz, “bit-
banging” DIO4/5
MIN
TYP
MAX
UNIT
78
kHz
150
kHz
FOOTNOTES
1_{This parameter is has been verified in production samples, but is not measured in production.}
2_{This parameter is has been verified in production samples, but is measured in production only at DC.}
3_{This parameter is measured in production at the limits of the specified operating temperature.}
4_{This parameter defines a nominal relationship rather than a measured parameter. Correct circuit operation is verified with other specs}
that use this nominal relationship as a reference.
NAME
C1
C2
XTAL
CXS
CXL
CBIAS
CBST1
C2P5
CBST2
FROM
V3P3A
V3P3D
XIN
XIN
XOUT
VBIAS
VDRV
V2P5
VLCD
Recommended External Components
TO
FUNCTION
AGND Bypass capacitor for 3.3V supply
DGND
XOUT
Bypass capacitor for 3.3V supply
32.768kHz crystal. Electrically similar to ECS
ECX-3TA series
AGND Load capacitor for crystal (depends on crystal
AGND ^{specs and board parasitics).}
AGND Bypass capacitor for VBIAS
External Boost charging capacitor
DGND Bypass capacitor for V2P5
DGND Boost bypass capacitor
VALUE
≥0.1±20%
≥0.1±20%
32.768
22±10%
22±10%
≥1000±20%
33±20%
≥0.1±20%
≥0.22±20%
UNIT
µF
µF
kHz
pF
pF
pF
nF
µF
µF
Page: 89 of 95
© 2005-2007 TERIDIAN Semiconductor Corporation
V2.6