STM8L151X6 Datasheet, PDF (95/146 Pages) STMicroelectronics – Operating conditions

STM8L151x6/8 STM8L152x6/8
Electrical parameters
Flash memory
Symbol
Table 36. Flash program and data EEPROM memory
Parameter
Conditions
Min.
Typ.
Max.
(1)
Unit
V_DD
Operating voltage
(all modes, read/write/erase)
f_SYSCLK = 16 MHz
1.65
3.6 V
Programming time for 1 or 128 bytes (block)
erase/write cycles (on programmed byte)
-
t_{prog Programming time for 1 to 128 bytes (block)}
write cycles (on erased byte)
-
-
6-
ms
-
3-
I_prog Programming/ erasing consumption
T_A=+25 °C, V_DD = 3.0 V
-
-
0.7
mA
T_A=+25 °C, V_DD = 1.8 V
-
-
Data retention (program memory) after 10000
erase/write cycles at T_A=−40 τ ο +85 °C
(6 suffix)
T_RET=+85 °C
30⁽¹⁾
-
-
t_RET(2)
Data retention (program memory) after 10000
erase/write cycles at T_A=−40 τ ο +125 °C
(3 suffix)
Data retention (data memory) after 300000
erase/write cycles at T_A=−40 τ ο +85 °C
(6 suffix)
T_RET=+125 °C
T_RET=+85 °C
5⁽¹⁾
-
30⁽¹⁾
-
-
years
-
Data retention (data memory) after 300000
erase/write cycles at T_A=−40 τ ο +125 °C
(3 suffix)
Erase/write cycles (program memory)
N_RW ⁽³⁾ _{Erase/write cycles (data memory)}
T_RET=+125 °C
T_A=−40 τ ο +85 °C
(6 suffix),
T_A=−40 τ ο +105 °C
(7 suffix) or
T_A=−40 τ ο +125 °C
(3 suffix)
5⁽¹⁾
-
10⁽¹⁾
-
300⁽¹⁾
(4)
-
-
-
kcycles
-
1. Data based on characterization results.
2. Conforming to JEDEC JESD22a117
3. The physical granularity of the memory is 4 bytes, so cycling is performed on 4 bytes even when a write/erase operation
addresses a single byte.
4. Data based on characterization performed on the whole data memory.
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