STB24N60M2 Datasheet, PDF (9/22 Pages) STMicroelectronics – N-channel 600 V, 0.168 typ., 18 A MDmesh II Plus low Qg Power MOSFET in D2PAK

STB24N60M2, STI24N60M2, STP24N60M2, STW24N60M2
3
Test circuits
Test circuits
Figure 16. Switching times test circuit for
resistive load
Figure 17. Gate charge test circuit
VDD
VD
VGS
RG
PW
RL
2200
mF
D.U.T.
3.3
mF _VDD
12V
47kW
1kW
100nF
Vi=20V=VGMAX
2200
mF
IG=CONST
2.7kW
100W
D.U.T.
VG
47kW
PW
AM01468v1
1kW
AM01469v1
Figure 18. Test circuit for inductive load
switching and diode recovery times
Figure 19. Unclamped inductive load test circuit
G
25 W
A
D
D.U.T.
S
B
AA
FAST
DIODE
L=100mH
B
3.3
B
mF
D
G
RG
S
1000
mF
VDD
Vi
L
VD
2200
3.3
mF
mF
VDD
ID
D.U.T.
AM01470v1
Figure 20. Unclamped inductive waveform
9%5'66
9'
Pw
AM01471v1
Figure 21. Switching time waveform
ton
tdon
tr
toff
tdoff tf
9''
,'0
,'
0
9''
90%
10% VDS
90%
VGS
90%
10%
$0Y
0
10%
AM01473v1
DocID023964 Rev 4
9/22