STB24N60M2 Datasheet, PDF (3/22 Pages) STMicroelectronics – N-channel 600 V, 0.168 typ., 18 A MDmesh II Plus low Qg Power MOSFET in D2PAK

STB24N60M2, STI24N60M2, STP24N60M2, STW24N60M2
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
V_GS Gate-source voltage
± 25
I_D Drain current (continuous) at T_C = 25 °C
18
I_D Drain current (continuous) at T_C = 100 °C
12
I_DM ⁽¹⁾ Drain current (pulsed)
72
P_TOT Total dissipation at T_C = 25 °C
150
dv/dt ⁽²⁾ Peak diode recovery voltage slope
15
dv/dt⁽³⁾ MOSFET dv/dt ruggedness
50
T_stg Storage temperature
T_j Max. operating junction temperature
1. Pulse width limited by safe operating area.
2. I_SD ≤ 18 A, di/dt ≤ 400 A/µs; V_{DS peak} < V_(BR)DSS, V_DD=400 V.
3. V_DS ≤ 480 V
- 55 to 150
Unit
V
A
A
A
W
V/ns
V/ns
°C
Table 3. Thermal data
Symbol
Parameter
Value
Unit
D²PAK I²PAK TO-220 TO-247
R_thj-case Thermal resistance junction-case max
R_thj-pcb Thermal resistance junction-pcb max⁽¹⁾
30
R_thj-amb Thermal resistance junction-ambient max
1. When mounted on 1 inch² FR-4, 2 Oz copper board
0.83
62.5
°C/W
°C/W
50 °C/W
Table 4. Avalanche characteristics
Symbol
Parameter
Value
Unit
I_AR
Avalanche current, repetitive or not
repetitive (pulse width limited by T_jmax )
E_AS
Single pulse avalanche energy (starting
T_j=25°C, I_D= I_AR; V_DD=50)
3.5
A
180
mJ
DocID023964 Rev 4
3/22