STB24N60M2 Datasheet, PDF (1/22 Pages) STMicroelectronics – N-channel 600 V, 0.168 typ., 18 A MDmesh II Plus low Qg Power MOSFET in D2PAK

STB24N60M2, STI24N60M2,
STP24N60M2, STW24N60M2
N-channel 600 V, 0.168 Ω typ., 18 A MDmesh II Plus™ low Q_g
Power MOSFET in D²PAK, I²PAK, TO-220 and TO-247 packages
Datasheet − production data
TAB
2
3
1
D²PAK
TAB
TAB
123
I²PAK
3
2
1
TO-220
3
2
1
TO-247
Figure 1. Internal schematic diagram
D(2, TAB)
Features
Order codes
STB24N60M2
STI24N60M2
STP24N60M2
STW24N60M2
V_DS @ T_Jmax
650 V
R_DS(on) max I_D
0.19 Ω 18 A
• Extremely low gate charge
• Lower R_DS(on) x area vs previous generation
• Low gate input resistance
• 100% avalanche tested
• Zener-protected
Applications
• Switching applications
G(1)
S(3)
AM01476v1
Description
These devices are N-channel Power MOSFETs
developed using a new generation of MDmesh™
technology: MDmesh II Plus™ low Q_g. These
revolutionary Power MOSFETs associate a
vertical structure to the company's strip layout to
yield one of the world's lowest on-resistance and
gate charge. They are therefore suitable for the
most demanding high efficiency converters.
Order codes
STB24N60M2
STI24N60M2
STP24N60M2
STW24N60M2
Table 1. Device summary
Marking
Package
24N60M2
D²PAK
I²PAK
TO-220
TO-247
Packaging
Tape and reel
Tube
May 2013
This is information on a product in full production.
DocID023964 Rev 4
1/22
www.st.com
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