STB24N60M2 Datasheet, PDF (7/22 Pages) STMicroelectronics – N-channel 600 V, 0.168 typ., 18 A MDmesh II Plus low Qg Power MOSFET in D2PAK

STB24N60M2, STI24N60M2, STP24N60M2, STW24N60M2
Electrical characteristics
Figure 8. Gate charge vs gate-source voltage
VGS
(V)
12 _VDS
10
VDD=480 V
ID=18 A
AM15471v1
VDS
(V)
600
500
8
400
Figure 9. Static drain-source on-resistance
RDS(on)
(Ω)
0.176
VGS=10V
AM15465v1
0.172
6
300
0.168
4
200
0.164
2
100
0
0
0 5 10 15 20 25 30 Qg(nC)
0.160
0
4
8
12 16 ID(A)
Figure 10. Capacitance variations
C
(pF)
AM15467v1
1000
Ciss
100
10
1
0.1
1
Coss
Crss
10
100 VDS(V)
Figure 11. Output capacitance stored energy
Eoss
(µJ)
8
AM15472v1
7
6
5
4
3
2
1
0
0 100 200 300 400 500 600 VDS(V)
Figure 12. Normalized gate threshold voltage vs
temperature
VGS(th)
(norm)
1.1
ID = 250 µA
AM15473v1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 TJ(°C)
Figure 13. Normalized on-resistance vs
temperature
RDS(on)
(norm)
AM15464v1
2.3
ID = 9 A
2.1
VGS = 10 V
1.9
1.7
1.5
1.3
1.1
0.9
0.7
0.5
-50 -25 0 25 50 75 100 TJ(°C)
DocID023964 Rev 4
7/22