STB24N60M2 Datasheet, PDF (5/22 Pages) STMicroelectronics – N-channel 600 V, 0.168 typ., 18 A MDmesh II Plus low Qg Power MOSFET in D2PAK

STB24N60M2, STI24N60M2, STP24N60M2, STW24N60M2
Electrical characteristics
Table 8. Source drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
I_SD Source-drain current
-
I_SDM ⁽¹⁾ Source-drain current (pulsed)
-
V_SD(2) Forward on voltage
I_SD = 18 A, V_GS = 0
-
18 A
72 A
1.6 V
t_rr
Reverse recovery time
- 332
ns
Q_rr Reverse recovery charge
I_SD = 18 A, di/dt = 100 A/µs
V_DD = 60 V (see Figure 18)
-
4
nC
I_RRM Reverse recovery current
-
24
A
t_rr
Reverse recovery time
I_SD = 18 A, di/dt = 100 A/µs
-
450
ns
Q_rr Reverse recovery charge
V_DD = 60 V, T_j = 150 °C
- 5.5
nC
I_RRM Reverse recovery current
(see Figure 18)
-
25
A
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
DocID023964 Rev 4
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