STB24N60M2 Datasheet, PDF (8/22 Pages) STMicroelectronics – N-channel 600 V, 0.168 typ., 18 A MDmesh II Plus low Qg Power MOSFET in D2PAK

Electrical characteristics
STB24N60M2, STI24N60M2, STP24N60M2, STW24N60M2
Figure 14. Source-drain diode forward
characteristics
VSD
(V)
1.4
AM15468v1
1.2
TJ=-50°C
1
0.8
0.6
TJ=150°C
TJ=25°C
0.4
0.2
0
0 2 4 6 8 10 12 14 16 ISD(A)
Figure 15. Normalized B_VDSS vs temperature
VDS
(norm)
1.11
1.09
ID = 1mA
AM15466v1
1.07
1.05
1.03
1.01
0.99
0.97
0.95
0.93
-50 -25 0
25 50 75 100 TJ(°C)
8/22
DocID023964 Rev 4