STB16N65M5 Datasheet, PDF (9/19 Pages) STMicroelectronics – N-channel 650 V, 0.230 Ω, 12 A MDmesh™ V Power MOSFET in D²PAK, DPAK

STB16N65M5, STD16N65M5
3
Test circuits
Test circuits
Figure 17. Switching times test circuit for
resistive load
Figure 18. Gate charge test circuit
VDD
VD
VGS
RG
PW
RL
2200
µF
D.U.T.
3.3
µF _VDD
12V
47kΩ
1kΩ
100nF
Vi=20V=VGMAX
2200
µF
IG=CONST
2.7kΩ
100Ω
D.U.T.
VG
47kΩ
PW
AM01468v1
1kΩ
AM01469v1
Figure 19. Test circuit for inductive load
Figure 20. Unclamped inductive load test
switching and diode recovery times
circuit
G
25 Ω
A
D
D.U.T.
S
B
AA
FAST
DIODE
L=100µH
B
3.3
B
µF
D
G
RG
S
1000
µF
VDD
Vi
L
VD
2200
3.3
µF
µF
VDD
ID
D.U.T.
Pw
AM01470v1
AM01471v1
Figure 21. Unclamped inductive waveform Figure 22. Switching time waveform
V(BR)DSS
VD
Id
90%Vds
Concept waveform for Inductive Load Turn-off
90%Id
VDD
IDM
ID
VDD
Vgs
90%Vgs on
10%Vds
Vds
Vgs(I(t))
AM01472v1
Tdelay-off
Trise
Tfall
Tcross -over
10%Id
AM05540v1
Doc ID 18146 Rev 2
9/19