STB16N65M5 Datasheet, PDF (8/19 Pages) STMicroelectronics – N-channel 650 V, 0.230 Ω, 12 A MDmesh™ V Power MOSFET in D²PAK, DPAK

Electrical characteristics
STB16N65M5, STD16N65M5
Figure 14. Normalized gate threshold voltage Figure 15. Source-drain diode forward
vs. temperature
characteristics
VGS(th)
(norm)
1.10
ID=250µA
AM03184v1
VSD
(V)
1.0
TJ=-25°C
AM03186v1
1.00
0.90
0.9
0.8
TJ=25°C
0.7
TJ=150°C
0.80
0.70
-50
0
50
100 TJ(°C)
0.6
0.5
0.4
0
5
10
ISD(A)
Figure 16. Switching losses vs. gate
resistance⁽¹⁾
E
(µJ)
AM10359v1
100
Eon
80
60
40
Eoff
20
0
0
10
20
30
40
1. Eon including reverse recovery of a SiC diode.
RG(Ω)
8/19
Doc ID 18146 Rev 2