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STB16N65M5 Datasheet, PDF (5/19 Pages) STMicroelectronics – N-channel 650 V, 0.230 Ω, 12 A MDmesh™ V Power MOSFET in D²PAK, DPAK | |||
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STB16N65M5, STD16N65M5
Electrical characteristics
Table 6. Switching times
Symbol
Parameter
td (v)
tr (v)
tf (i)
tc(off)
Voltage delay time
Voltage rise time
Current fall time
Crossing time
Test conditions
VDD = 400 V, ID = 8 A,
RG = 4.7 â¦, VGS = 10 V
(see Figure 19)
(see Figure 22)
Min. Typ. Max Unit
25
ns
7
ns
-
-
6
ns
8
ns
Table 7.
Symbol
Source drain diode
Parameter
Test conditions
Min. Typ. Max. Unit
ISD Source-drain current
ISDM (1) Source-drain current (pulsed)
-
VSD (2) Forward on voltage
ISD = 12 A, VGS = 0
-
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 12 A, di/dt = 100 A/µs
VDD = 100 V (see Figure 22)
-
trr
Reverse recovery time
ISD = 12 A, di/dt = 100 A/µs
Qrr Reverse recovery charge
VDD = 100 V, Tj = 150 °C
-
IRRM Reverse recovery current
(see Figure 22)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
12 A
48 A
1.5 V
300
ns
3.5
nC
23
A
350
ns
4
nC
24
A
Doc ID 18146 Rev 2
5/19
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