STB16N65M5 Datasheet, PDF (7/19 Pages) STMicroelectronics – N-channel 650 V, 0.230 Ω, 12 A MDmesh™ V Power MOSFET in D²PAK, DPAK

STB16N65M5, STD16N65M5
Electrical characteristics
Figure 8.
BVDSS
(norm)
1.07
Normalized B_VDSS vs. temperature Figure 9.
ID=1mA
AM03187v1
RDS(on)
(Ω)
0.245
Static drain-source on resistance
AM03181v1
VGS=10V
1.05
0.240
1.03
0.235
1.01
0.230
0.99
0.225
0.97
0.95
0.93
-50 -25 0
25 50 75 100 TJ(°C)
0.220
0.215
0.210
0 2 4 6 8 10 12 ID(A)
Figure 10. Output capacitance stored energy Figure 11. Capacitance variations
Eoss
(µJ)
7
6
AM03312v1
C
(pF)
10000
5
1000
4
3
100
2
1
0
0 100 200 300 400 500 600 VDS(V)
10
1
0.1
1
10
100
AM03183v1
Ciss
Coss
Crss
VDS(V)
Figure 12. Gate charge vs. gate-source
voltage
Figure 13. Normalized on resistance vs.
temperature
VGS
(V)
12
VDS
10
8
6
VDD=520V
VGS=10V
ID=6A
AM03182v1
VGS
500
400
300
RDS(on)
(norm)
2.1
1.9
1.7
1.5
1.3
VGS=10V
ID=6.5V
AM03185v1
4
200
1.1
0.9
2
100
0.7
0
0 5 10 15 20 25 30 35 Qg(nC)
0.5
-50
0
50
100
TJ(°C)
Doc ID 18146 Rev 2
7/19