STB16N65M5 Datasheet, PDF (3/19 Pages) STMicroelectronics – N-channel 650 V, 0.230 Ω, 12 A MDmesh™ V Power MOSFET in D²PAK, DPAK

STB16N65M5, STD16N65M5
1
Electrical ratings
Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Parameter
V_DS
V_GS
I_D
I_D
I_DM ⁽¹⁾
P_TOT
I_AR
E_AS
dv/dt ⁽²⁾
Drain-source voltage
Gate-source voltage
Drain current (continuous) at T_C = 25 °C
Drain current (continuous) at T_C = 100 °C
Drain current (pulsed)
Total dissipation at T_C = 25 °C
Avalanche current, repetitive or not-
repetitive (pulse width limited by T_j max)
Single pulse avalanche energy
(starting T_j = 25 °C, I_D = I_AR, V_DD = 50 V)
Peak diode recovery voltage slope
T_stg Storage temperature
T_j Max. operating junction temperature
1. Pulse width limited by safe operating area.
2. I_SD ≤ 12 A, di/dt ≤ 400 A/µs, V_DD = 400 V, V_Peak < V_(BR)DSS
Value
650
± 25
12
7.3
48
90
4
200
15
- 55 to 150
150
Table 3. Thermal data
Symbol
Parameter
R_thj-case Thermal resistance junction-case max
R_thj-pcb(1) Thermal resistance junction-pcb max
1. When mounted on 1inch² FR-4 board, 2 oz Cu
Value
DPAK
D²PAK
1.38
50
30
Unit
V
V
A
A
A
W
A
mJ
V/ns
°C
°C
Unit
°C/W
°C/W
Doc ID 18146 Rev 2
3/19