STB16N65M5 Datasheet, PDF (1/19 Pages) STMicroelectronics – N-channel 650 V, 0.230 Ω, 12 A MDmesh™ V Power MOSFET in D²PAK, DPAK

STB16N65M5
STD16N65M5
N-channel 650 V, 0.230 Ω, 12 A MDmesh™ V Power MOSFET
in D²PAK, DPAK
Features
Type
STB16N65M5
STD16N65M5
V_DSS @
T_Jmax
R_DS(on)
max.
710 V < 0.279 Ω
I_D
12 A
■ DPAK worldwide best R_DS(on)
■ Higher V_DSS rating
■ High dv/dt capability
■ Excellent switching performance
■ Easy to drive
■ 100% avalanche tested
Application
■ Switching applications
Description
These devices are N-channel MDmesh™ V
Power MOSFETs based on an innovative
proprietary vertical process technology, which is
combined with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The
resulting product has extremely low on-
resistance, which is unmatched among silicon
based Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficiency.
TAB
3
1
D²PAK
TAB
3
1
DPAK
Figure 1. Internal schematic diagram
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3
!-V
Table 1. Device summary
Order codes
STB16N65M5
STD16N65M5
Marking
16N65M5
Package
D²PAK
DPAK
Packaging
Tape and reel
October 2011
Doc ID 18146 Rev 2
1/19
www.st.com
19