PD55008-E_10 Datasheet, PDF (9/25 Pages) STMicroelectronics – RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

PD55008-E, PD55008S-E
4.2
PD54003S-E
Typical performance
Figure 17. Output power vs. input power
Figure 18. Power gain vs. output power
14
12
10
8
6
4
2
0
0
480 MHz
500 MHz
520 MHz
VDD = 12.5 V
IDQ = 150 mA
0.1
0.2
0.3
0.4
0.5
Pin, INPUT POWER (W)
22
20
520 MHz
18
500 MHz
16
480 MHz
14
12
10
8
6
0
VDD = 12.5 V
IDQ = 150 mA
2
4
6
8
10
12
Pout, OUTPUT POWER (W)
Figure 19. Drain efficiency vs. output power Figure 20. Input return loss vs. output power
80
70
60
50
40
30
20
10
0
0
520 MHz
500 MHz
480 MHz
VDD = 12.5 V
IDQ = 150 mA
2
4
6
8
10
12
Pout, OUTPUT POWER (W)
0
-10
-20
-30
-40
0
520 MHz
480 MHz
500 MHz
VDD = 12.5 V
IDQ = 150 mA
2
4
6
8
10
12
Pout, OUTPUT POWER (W)
Figure 21. Output power vs. bias current
Figure 22. Drain efficiency vs. bias current
12
10
8
6
4
2
0
0
480 MHz
520 MHz
500 MHz
VDD = 12.5 V
Pin= 21 dBm
100 200 300 400 500 600 700 800
IDQ, BIAS CURRENT (mA)
70
60
50
40
30
20
10
0
520 MHz
500 MHz
480 MHz
VDD = 12.5 V
Pin= 21 dBm
100 200 300 400 500 600 700 800
IDQ, BIAS CURRENT (mA)
Doc ID 12259 Rev 2
9/25