PD55008-E_10 Datasheet, PDF (7/25 Pages) STMicroelectronics – RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

PD55008-E, PD55008S-E
4.1
PD55008-E
Typical performance
Figure 6. Output power vs. input power
Figure 7. Power gain vs. output power
14
22
12
480 MHz
520 MHz
20
10
500 MHz
18
480 MHz
8
16
520 MHz
14
500 MHz
6
12
4
10
2
VDD = 12.5 V
IDQ = 150 mA
VDD = 12.5 V
8
IDQ = 150 mA
0
6
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
0
2
4
6
8
10
12
Pin, INPUT POWER (W)
Pout, OUTPUT POWER (W)
Figure 8. Drain efficiency vs. output power Figure 9. Input return loss vs. output power
80
70
60
50
40
30
20
10
0
0
0
520 MHz
500 MHz
-10
480 MHz
-20
500 MHz
480 MHz
-30
VDD = 12.5 V
IDQ = 150 mA
VDD = 12.5 V
IDQ = 150 mA
520 MHz
-40
2
4
6
8
10
12
0
2
4
6
8
10
12
Pout, OUTPUT POWER (W)
Pout, OUTPUT POWER (W)
Figure 10. Output power vs. bias current
Figure 11. Drain efficiency vs. bias current
12
10
8
6
4
2
0
0
500 MHz
480 MHz
520 MHz
VDD = 12.5 V
Pin= 21.7 dBm
100 200 300 400 500 600 700 800
IDQ, BIAS CURRENT (mA)
70
60
50
40
30
20
10
0
480 MHz
520 MHz
500 MHz
VDD = 12.5 V
Pin= 21.7 dBm
100 200 300 400 500 600 700 800
IDQ, BIAS CURRENT (mA)
Doc ID 12259 Rev 2
7/25