PD55008-E_10 Datasheet, PDF (1/25 Pages) STMicroelectronics – RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

PD55008-E
PD55008S-E
RF POWER transistor, LdmoST plastic family
N-channel enhancement-mode, lateral MOSFETs
Features
■ Excellent thermal stability
■ Common source configuration
■ P_OUT = 8 W with 17dB gain @ 500 MHz/12.5 V
■ New RF plastic package
Description
The device is a common source N-channel,
enhancement-mode lateral field-effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It
operates at 12 V in common source mode at
frequencies up to 1 GHz.
The device boasts the excellent gain, linearity and
reliability of ST’s latest LDMOS technology
mounted in the first true SMD plastic RF power
package, PowerSO-10RF. The device’s superior
linearity performance makes it an ideal solution
for car mobile radio.
The PowerSO-10 plastic package, designed to
offer high reliability, is the first ST JEDEC
approved, high power SMD package. It has been
specially optimized for RF needs and offers
excellent RF performances and ease of assembly.
Mounting recommendations are available in
www.st.com/rf/ (look for application note
AN1294).
PowerSO-10RF
(formed lead)
PowerSO-10RF
(straight lead)
Figure 1. Pin connection
Source
Gate
Drain
Table 1. Device summary
Order code
PD55008-E
PD55008S-E
PD55008TR-E
PD55008STR-E
May 2010
Package
PowerSO-10RF (formed lead)
PowerSO-10RF (straight lead)
PowerSO-10RF (formed lead)
PowerSO-10RF (straight lead)
Doc ID 12259 Rev 2
Packing
Tube
Tube
Tape and reel
Tape and reel
1/25
www.st.com
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