PD55008-E_10 Datasheet, PDF (4/25 Pages) STMicroelectronics – RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

Electrical characteristics
2
Electrical characteristics
PD55008-E, PD55008S-E
2.1
T_CASE = +25 ^oC
Static
Table 4. Static
Symbol
I_DSS
I_GSS
V_GS(Q)
V_DS(ON)
g_FS
C_ISS
C_OSS
C_RSS
V_GS = 0
V_GS = 20 V
V_DS = 10 V
V_GS = 10 V
V_DS = 10 V
V_GS = 0
V_GS = 0
V_GS = 0
Test conditions
V_DS = 28 V
V_DS = 0
I_D = 150 mA
I_D = 1.5 A
I_D = 1.5 A
V_DS = 12.5 V
V_DS = 12.5 V
V_DS = 12.5 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
Min. Typ. Max. Unit
1 µA
1 µA
2.0
5.0 V
0.67 V
1.6
mho
58
pF
38
pF
2.8
pF
2.2
Dynamic
Table 5. Dynamic
Symbol
Test conditions
P_OUT V_DD = 12.5 V, I_DQ = 150 mA
f = 500 MHz
G_P
V_DD = 12.5 V, I_DQ = 150 mA, P_OUT = 8 W, f = 500 MHz
n_D
V_DD = 12.5 V, I_DQ = 150 mA, P_OUT = 8 W, f = 500 MHz
Load V_DD = 15.5 V, I_DQ = 150 mA, P_OUT = 8 W, f = 500 MHz
mismatch All phase angles
Min. Typ. Max. Unit
8
W
15 17
dB
50 55
%
20:1
VSWR
2.3
Moisture sensitivity level
Table 6.
Moisture sensitivity level
Test methodology
J-STD-020B
Rating
MSL 3
4/25
Doc ID 12259 Rev 2