PD55008-E_10 Datasheet, PDF (8/25 Pages) STMicroelectronics – RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

Typical performance
PD55008-E, PD55008S-E
Figure 12. Output power vs. supply voltage Figure 13. Drain efficiency vs. supply voltage
13
12
11
10
9
8
7
6
5
4
3
9
500 MHz
480 MHz
520 MHz
Idq= 150 mA
Pin= 21.7 dBm
10
11
12
13
14
15
VDD, SUPPLY VOLTAGE (V)
70
60
50
40
30
20
9
500 MHz
480 MHz
520 MHz
Idq= 150 mA
Pin= 21.7 dBm
10
11
12
13
14
15
VDD, SUPPLY VOLTAGE (V)
Figure 14. Output power vs. gate-source
voltage
Table 8.
12
10
8
6
4
2
0
0
500 MHz
480 MHz
520 MHz
VDD = 12.5 V
Pin= 21.7 dBm
1
2
3
4
VGS, GATE-SOURCE VOLTAGE (V)
10
8
6
4
2
0
0
Output power vs. input power
800 MHz
850 MHz
900 MHz
Vdd = 12.5V
Idq = 250mA
0.1
0.2
0.3
0.4
0.5
0.6
Input Power (W)
Figure 15. Drain efficiecy vs. output power
60
850 MHz
50
900 MHz
Figure 16. Input return loss vs. output power
0
-5
40
800 MHz
30
20
Vdd = 12.5V
Idq = 250mA
10
1
2
3
4
5
6
7
8
9
Output Power (W)
-10
-15
-20
-25
-30
0
800 MHz
900 MHz
850 MHz
1
2
3
4
5
6
Output Power (W)
Vdd = 12.5V
Idq = 250mA
7
8
9
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Doc ID 12259 Rev 2