PD55008-E_10 Datasheet, PDF (6/25 Pages) STMicroelectronics – RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

Typical performance
4
Typical performance
PD55008-E, PD55008S-E
Figure 3. Capacitance vs. drain voltage
Figure 4. Drain current vs. gate-source
voltage
1000
100
f=1 MHz
4
3
Ciss
10
1
0
2
Coss
1
Crss
5
10
15
20
VDD, DRAIN VOLTAGE (V)
25
0
1
Vds = 10 V
2
3
4
5
6
VGS, GATE-SOURCE VOLTAGE (V )
Figure 5. Gate-source voltage vs. case
temperature
1.06
1.04
1.02
1
0.98
0.96
0.94
0.92
-25
VDS = 10 V
ID = .5A
ID = 2A
ID = 1.5A
ID = 1A
ID = .25A
0
25
50
75
100
Tc, CASE TEMPERATURE (°C)
6/25
Doc ID 12259 Rev 2