PD54008-E Datasheet, PDF (9/28 Pages) STMicroelectronics – RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode, lateral MOSFETs

PD54008-E, PD54008S-E
Typical performance
Figure 13. Output power Vs.
gate bias voltage
Table 6. IMD3 vs. Output Power (470MHz)
Pout (W )
10
IMD3 (dB)
-20
8
500 MHz
6
480 MHz
520 MHz
4
2
VDD = 7.5 V
Pin = 0.6 W
0
0
0.5
1
1.5
2
2.5
3
3.5
VGS (V)
Figure 14. Power gain Vs. output power
-25
Vdd = 7.5V
-30
Vdd = 9V
-35
-40
-45
Freq = 470 MHz
Idq = 400 mA
-50
0
1
2
3
4
5
6
7
8
9
Pout (W)
Table 7.
Return loss and efficiency Vs.
output power
Gp (dB)
22
21
20
19
18
17
16
1
175 MHz
200 MHz
Pout (W)
250 MHz
Vdd = 7.5 V
Idq = 150 mA
10
IRL (dB)
10
Vdd = 7.5 V
Idq = 150 mA
5
0
200 MHz
Eff. (%)
70
60
175 MHz
250 MHz
50
-5
40
200 MHz
-10
30
175 MHz
-15
20
250 MHz
-20
10
0
12
3
4
5
6
7
8
9
Pout (W)
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