PD54008-E Datasheet, PDF (8/28 Pages) STMicroelectronics – RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode, lateral MOSFETs

Typical performance
PD54008
Figure 9. Output power Vs.
bias current
Pout (W)
12
PD54008-E, PD54008S-E
Figure 10. Drain efficiency Vs. bias current
Nd (%)
70
10
480 MHz
8
500 MHz
6
4
2
0
200
400
600
IDQ (mA)
Figure 11. Output power Vs.
drain voltage
60
520 MHz
50
500 MHz
480 MHz
520 MHz
Pin = 0.6 W
VDD = 7.5 V
800
1000
40
30
0
Pin = .6 W
VDD = 7.5 V
200
400
600
800
1000
IDQ (mA)
Figure 12. Drain efficiency Vs. drain voltage
Pout (W )
14
12
10
8
6
4
2
0
5
6
480 MHz
500 MHz
520 MHz
IDQ = 150 mA
Pin = 0.6 W
7
8
9
10
11
12
VDS (V)
Nd (%)
70
60
520 MHz
50
500 MHz
480 MHz
40
IDQ = 150mA
Pin = 0.6 W
30
5
6
7
8
9
10
11
12
VDS (V)
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