PD54008-E Datasheet, PDF (7/28 Pages) STMicroelectronics – RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode, lateral MOSFETs

PD54008-E, PD54008S-E
PD54008
Figure 5. Output power Vs.
input power
Pout (W)
10
480 MHz
8
500 MHz
520 MHz
6
4
Typical performance
Figure 6. Power gain Vs. output power
Gp (dB)
16
14
480 MHz
12
10
500 MHz
520 MHz
2
VDD = 7.5 V
IDQ = 150 mA
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
Pin (W)
8
VDD = 7.5 V
IDQ = 150 mA
6
0 1 2 3 4 5 6 7 8 9 10
Pout (W)
Figure 7. Drain efficiency Vs.
output power
Figure 8. Return loss Vs. output power
Nd (%)
70
60
50
520 MHz
40
480 MHz
500 MHz
30
20
10
VDD = 7.5 V
IDQ = 150 mA
0
0 1 2 3 4 5 6 7 8 9 10
Pout (W)
Rtl (dB)
0
-10
480 MHz
-20
500 MHz
520 MHz
-30
VDD = 7.5 V
IDQ = 150 mA
-40
0 1 2 3 4 5 6 7 8 9 10
Pout (W)
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