PD54008-E Datasheet, PDF (6/28 Pages) STMicroelectronics – RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode, lateral MOSFETs

Typical performance
4
Typical performance
PD54008-E, PD54008S-E
Figure 2. Capacitance Vs. drain voltage
Figure 3. Drain current Vs. gate-source
voltage
C (pF)
1000
f = 1 MHz
100
10
1
0
5
10
VDS (V)
Id (A)
4
3.5
3
Ciss
2.5
Coss
2
1.5
1
Crss
0.5
VDS = 10 V
0
15
2.5
3
3.5
4
4.5
5
VGS (V)
Figure 4. Gate-source voltage Vs. case
temperature
VGS (NORMALIZED)
1.04
1.02
1
0.98
VDS = 10 V
0.96
-25
0
25
Tc (°C)
ID = 3 A
ID = 2 A
ID = 1.5 A
ID = 1 A
ID = 0.25 A
50
75
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