PD54008-E Datasheet, PDF (1/28 Pages) STMicroelectronics – RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode, lateral MOSFETs

PD54008-E
PD54008S-E
RF POWER transistor, LDMOST plastic family
N-Channel enhancement-mode, lateral MOSFETs
General features
■ Excellent thermal stability
■ Common source configuration
■ P_OUT = 8W with 11.5dB gain @ 500MHz / 7.5
■ New RF plastic package
Description
The PD54008 is a common source N-Channel,
enhancement-mode lateral Field-Effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It
operates at 7 V in common source mode at
frequencies of up to 1 GHz. PD54008 boasts the
excellent gain, linearity and reliability of ST’s
latest LDMOS technology mounted in the first true
SMD plastic RF power package, PowerSO-10RF.
PD54008’s superior linearity performance makes
it an ideal solution for portable radio.
The PowerSO-10 plastic package, designed to
offer high reliability, is the first ST JEDEC
approved, high power SMD package. It has been
specially optimized for RF needs and offers
excellent RF performances and ease of
assembly.
Mounting recommendations are available in
www.st.com/rf/ (look for application note AN1294)
PowerSO-10RF
(formed lead)
PowerSO-10RF
(straight lead)
Pin connection
Source
Gate
Drain
Order codes
Part number
PD54008-E
PD54008S-E
PD54008TR-E
PD54008STR-E
April 2006
Package
PowerSO-10RF (formed lead)
PowerSO-10RF (straight lead)
PowerSO-10RF (formed lead)
PowerSO-10RF (straight lead)
Rev 1
Packing
Tube
Tube
Tape and reel
Tape and reel
1/28
www.st.com
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