PD54008-E Datasheet, PDF (12/28 Pages) STMicroelectronics – RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode, lateral MOSFETs

Typical performance
PD54008-E, PD54008S-E
PD54008S
Figure 21. Output power Vs.
drain voltage
Figure 22. Drain efficiency Vs.
drain voltage
Pout (W)
14
12
10
480 MHz
520 MHz
8
500 MHz
6
4
2
IDQ = 150mA
Pin = 0.45 W
0
5
6
7
8
9
10
11
12
VDS (V)
Figure 23. Output power Vs.
gate bias voltage
Nd (%)
70
60
50
520 MHz
480 MHz
500 MHz
40
IDQ = 150mA
Pin = 0.45 W
30
5
6
7
8
9
10
11
12
VDS (V)
Pout (W)
10
8
480 MHz
500 MHz
6
520 MHz
4
2
VDD = 7.5 V
Pin = 0.45 W
0
0
0.5
1
1.5
2
2.5
3
3.5
VGS (V)
12/28