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STD18NF25 Datasheet, PDF (8/18 Pages) STMicroelectronics – N-channel 250 V, 0.14 Ω, 17 A low gate charge STripFET™ II Power MOSFET in D2PAK and DPAK packages
Electrical characteristics
STB18NF25, STD18NF25
Figure 14. Source-drain diode forward
characteristics
Figure 15. Normalized BVDSS vs temperature
VSD
(V)
1.0
TJ=-50°C
AM05558v1
BVDSS
(norm)
1.15
AM05559v1
0.9
0.8
TJ=25°C
0.7
0.6
TJ=175°C
1.10
1.05
1.00
0.5
0.95
0.4
0
5
10
15
20 ISD(A)
0.90
-100 -50 0 50 100 150 TJ(°C)
8/18
Doc ID 16785 Rev 3