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STD18NF25 Datasheet, PDF (5/18 Pages) STMicroelectronics – N-channel 250 V, 0.14 Ω, 17 A low gate charge STripFET™ II Power MOSFET in D2PAK and DPAK packages
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STB18NF25, STD18NF25
Electrical characteristics
Table 7.
Symbol
Switching times
Parameter
td(on)
tr
Turn-on delay time
Rise time
td(off)
tf
Turn-off delay time
Fall time
Test conditions
VDD=125 V, ID=8.5 A,
RG=4.7 Ω, VGS=10 V
(see Figure 16)
VDD=125 V, ID=8.5 A,
RG=4.7 Ω, VGS=10 V
(see Figure 16)
Min. Typ. Max. Unit
8.8
ns
-
-
17.2
ns
21
ns
-
-
8.8
ns
Table 8. Source drain diode
Symbol
Parameter
Test conditions
ISD
ISDM(1)
Source-drain current
Source-drain current
(pulsed)
VSD(2) Forward on voltage
ISD=17 A, VGS=0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 17 A, di/dt = 100 A/µs,
VDD = 50 V
(see Figure 18)
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 17 A, di/dt = 100 A/µs,
VDD = 50 V, Tj=150 °C
(see Figure 18)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300 µs, duty cycle 1.5%
Min.
-
-
-
-
Typ. Max. Unit
17 A
68 A
1.5 V
157
ns
0.91
µC
11.6
A
196
ns
1.34
µC
13.7
A
Doc ID 16785 Rev 3
5/18
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