STD18NF25 Datasheet, PDF (3/18 Pages) STMicroelectronics – N-channel 250 V, 0.14 Ω, 17 A low gate charge STripFET™ II Power MOSFET in D2PAK and DPAK packages

STB18NF25, STD18NF25
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
V_DS
V_GS
I_D
I_D
I_DM(1)
P_TOT
dv/dt⁽²⁾
Drain-source voltage
Gate-source voltage
Drain current (continuous) at T_C = 25 °C
Drain current (continuous) at T_C=100 °C
Drain current (pulsed)
Total dissipation at T_C = 25 °C
Peak diode recovery voltage slope
T_J
Operating junction temperature
T_stg
Storage temperature
1. Pulse width limited by safe operating area.
2. I_SD ≤17 A, di/dt ≤ 200 A/µs, V_DD ≤ 80%V_(BR)DSS
Table 3. Thermal data
Symbol
Parameter
R_thj-case Thermal resistance junction-case max
R_thj-pcb ⁽¹⁾ Thermal resistance junction-pcb max
1. When mounted on 1inch² FR-4, 2 Oz copper board.
Table 4. Avalanche data
Symbol
Parameter
I_AR
Avalanche current, repetitive or not
repetitive (pulse width limited by Tjmax)
E_AS
Single pulse avalanche energy (starting
Tj=25 °C, I_D=I_AR, V_DD=50 V)
Value
250
±20
17
12
68
110
10
-55 to 175
Unit
V
V
A
A
A
W
V/ns
°C
Value
D²PAK
1.36
30
DPAK
50
Unit
°C/W
°C/W
Value
Unit
17
A
170
mJ
Doc ID 16785 Rev 3
3/18