STD18NF25 Datasheet, PDF (1/18 Pages) STMicroelectronics – N-channel 250 V, 0.14 Ω, 17 A low gate charge STripFET™ II Power MOSFET in D2PAK and DPAK packages

STB18NF25,
STD18NF25
N-channel 250 V, 0.14 Ω, 17 A low gate charge STripFET™ II
Power MOSFET in D²PAK and DPAK packages
Datasheet — production data
Features
Type
STB18NF25
STD18NF25
V_DSS
250 V
250 V
R_DS(on)
max
< 0.165 Ω
< 0.165 Ω
I_D
P_TOT
17 A 110 W
17 A 110 W
■ Low gate charge
■ 100% avalanche tested
■ Exceptional dv/dt capability
Application
■ Switching applications
– Automotive
Description
These Power MOSFETs have been developed
using STMicroelectronics’ unique STripFET
process, which is specifically designed to
minimize input capacitance and gate charge. This
renders the devices suitable for use as primary
switch in advanced high-efficiency isolated DC-
DC converters for telecom and computer
applications, and applications with low gate
charge driving requirements.
TAB
3
1
D²PAK
TAB
3
1
DPAK
Figure 1. Internal schematic diagram
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3
Table 1. Device summary
Order codes
STB18NF25
STD18NF25
Marking
18NF25
18NF25
Package
D²PAK
DPAK
!-V
Packaging
Tape and reel
Tape and reel
April 2012
This is information on a product in full production.
Doc ID 16785 Rev 3
1/18
www.st.com
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