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STD18NF25 Datasheet, PDF (4/18 Pages) STMicroelectronics – N-channel 250 V, 0.14 Ω, 17 A low gate charge STripFET™ II Power MOSFET in D2PAK and DPAK packages
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Electrical characteristics
2
Electrical characteristics
STB18NF25, STD18NF25
(TCASE=25 °C unless otherwise specified)
Table 5. On/off states
Symbol
Parameter
V(BR)DSS
Drain-source breakdown
voltage
IDSS
Zero gate voltage drain
current
IGSS
VGS(th)
RDS(on)
Gate body leakage current
Gate threshold voltage
Static drain-source on-
resistance
Test conditions
VGS= 0, ID = 1 mA
VGS= 0, VDS = 250 V,
VGS= 0
VDS = 250 V,Tc=125 °C
VDS = 0, VGS = ±20 V
VDS= VGS, ID = 250 µA
VGS= 10 V, ID= 8.5 A
Min. Typ. Max. Unit
250
V
1 µA
10 µA
±100 nA
2
3
4
V
0.14 0.165 Ω
Table 6. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
gfs (1) Forward transconductance VDS = 15 V, ID = 8.5 A
- 14 -
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
1000
pF
VDS =25 V, f=1 MHz, VGS=0 - 178 -
pF
28
pF
Co(tr)
Co(er)
Equivalent capacitance time
related
Equivalent capacitance
energy related
VDS = 0 to 200 V, VGS=0
- 106 -
pF
- 79
-
pF
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
RG Gate input resistance
VDD= 200 V, ID = 17 A
VGS =10 V (see Figure 17)
29.5
nC
- 4.8
-
nC
15.6
nC
f=1 MHz gate DC bias=0 test
signal level=20 mV open
-
2
-
Ω
drain
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
4/18
Doc ID 16785 Rev 3
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