STD18NF25 Datasheet, PDF (7/18 Pages) STMicroelectronics – N-channel 250 V, 0.14 Ω, 17 A low gate charge STripFET™ II Power MOSFET in D2PAK and DPAK packages

STB18NF25, STD18NF25
Electrical characteristics
Figure 8. Gate charge vs gate-source voltage Figure 9. Static drain-source on-resistance
VGS
(V)
VDD=200V
12
VDS
ID=17A
10
AM05552v1
VGS
200
RDS(on)
(Ω)
0.14
AM05553v1
8
150
0.13
6
100
0.12
4
50
0.11
2
0
0
0
10
20
30 Qg(nC)
0.10
5
10
15
Figure 10. Output capacitance stored energy Figure 11. Capacitance variations
Eoss
(µJ)
AM05554v1
C
(pF)
ID(A)
AM05555v1
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0
50 100 150 200 VDS(V)
1000
Ciss
100
10
0.1
1
Coss
Crss
10
100 VDS(V)
Figure 12. Normalized gate threshold voltage Figure 13. Normalized on resistance vs
vs temperature
temperature
VGS(th)
(norm)
AM05556v1
RDS(on)
(norm)
AM05557v1
1.10
1.00
0.90
0.80
0.70
0.60
0.50
0.40
0.30
-100 -50 0 50 100 150 TJ(°C)
2.5
2.0
1.5
1.0
0.5
-100 -50 0 50 100 150 TJ(°C)
Doc ID 16785 Rev 3
7/18