STD16N50M2 Datasheet, PDF (8/21 Pages) STMicroelectronics – Extremely low gate charge

Electrical characteristics
Figure 14: Static drain-source on-resistance
RDS(on)
(Ω)
VGS=10V
GIPG2606141319LM
0.250
0.240
0.230
0
24
6 8 10 12 ID(A)
STD16N50M2, STF16N50M2, STP16N50M2
Figure 15: Normalized on-resistance vs. temperature
RDS(on)
(norm)
2.2
VGS=10V
GIPG2606141410LM
1.8
1.4
1
0.6
0.2
-75 -25
25
75 125 TJ(°C)
Figure 16: Output capacitance stored energy
Eoss
(µJ)
GIPG26067141339LM
4
3
2
1
0
0 100 200 300 400 500 VDS(V)
Figure 17: Source- drain diode forward
characteristics
VSD(V)
GIPG2606141300LM
1.2
1
TJ=-50°C
0.9
0.8
TJ=25°C
0.7
0.6
TJ=150°C
0.5
0 2 4 6 8 10 12 ISD(A)
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