STD16N50M2 Datasheet, PDF (1/21 Pages) STMicroelectronics – Extremely low gate charge

STD16N50M2, STF16N50M2,
STP16N50M2
N-channel 500 V, 0.24 Ω typ., 13 A MDmesh™ M2
Power MOSFETs in DPAK, TO-220FP and TO-220 packages
Datasheet - production data
Features
Order code
STD16N50M2
STF16N50M2
STP16N50M2
VDS @ TJmax
550 V
RDS(on) max.
ID
0.28 Ω
13 A
Figure 1: Internal schematic diagram
 Extremely low gate charge
 Excellent output capacitance (COSS) profile
 100% avalanche tested
 Zener-protected
Applications
 Switching applications
Description
These devices are N-channel Power MOSFETs
developed using MDmesh™ M2 technology.
Thanks to their strip layout and improved vertical
structure, these devices exhibit low on-resistance
and optimized switching characteristics,
rendering them suitable for the most demanding
high efficiency converters.
Order code
STD16N50M2
STF16N50M2
STP16N50M2
Table 1: Device summary
Marking
Package
DPAK
16N50M2
TO-220FP
TO-220
Packing
Tape and reel
Tube
May 2017
DocID026641 Rev 5
This is information on a product in full production.
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