STD16N50M2 Datasheet, PDF (3/21 Pages) STMicroelectronics – Extremely low gate charge

STD16N50M2, STF16N50M2, STP16N50M2
Electrical ratings
1
Electrical ratings
Symbol
Table 2: Absolute maximum ratings
Parameter
DPAK
Value
TO-220
Unit
TO-220FP
VGS
ID
ID
IDM⁽¹⁾
PTOT
dv/dt ⁽²⁾
dv/dt ⁽³⁾
VISO
Tstg
Tj
Gate-source voltage
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
Total dissipation at TC = 25 °C
Peak diode recovery voltage slope
MOSFET dv/dt ruggedness
Insulation withstand voltage (RMS) from
all three leads to external heat sink
(t = 1 s, TC = 25 °C)
Storage temperature range
Operating junction temperature range
±25
13
8
52
110
15
50
25
2500
V
A
A
A
W
V/ns
V/ns
V
-55 to 150
°C
Notes:
(1) _{Pulse width is limited by safe operating area.}
(2) _{ISD ≤ 13 A, di/dt ≤ 400 A/µs, VDS peak < V(BR)DSS, VDD = 80% V(BR)DSS}
(3) _{VDS ≤ 400 V}
Table 3: Thermal data
Symbol
Parameter
DPAK
Value
TO-220
TO-220FP
Rthj-case
Rthj-amb
Rthj-pcb⁽¹⁾
Thermal resistance junction-case
Thermal resistance junction-ambient
Thermal resistance junction-pcb
1.14
50
5
62.5
Unit
°C/W
Notes:
(1)_{When mounted on 1 inch² FR-4, 2 Oz copper board.}
Symbol
IAR
EAS
Table 4: Avalanche characteristics
Parameter
Avalanche current, repetitive or non-repetitive (pulse width limited by Tjmax)
Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Value
4
215
Unit
A
mJ
DocID026641 Rev 5
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