STD16N50M2 Datasheet, PDF (7/21 Pages) STMicroelectronics – Extremely low gate charge

STD16N50M2, STF16N50M2, STP16N50M2
Figure 8: Output characteristics
GIPG02306141524LM
ID(A)
VGS=7,8, 9, 10V
28
6V
24
20
16
12
5V
8
4
4V
0
0
4
8 12 16 20 VDS(V)
Figure 10: Gate charge vs. gate-source voltage
VGS
(V) _VDS
12
10
VDD=400 V
ID=13 A
GIPG2606141304LM
VDS
(V)
400
350
300
8
250
6
200
150
4
100
2
50
0
0
0
5
10
15
20 Qg(nC)
Figure 12: Normalized gate threshold voltage vs.
temperature
VGS(th)
(norm)
GIPG2606141354LM
1.1
ID=250 µA
1.0
0.9
0.8
0.7
0.6
-75
-25
25
75 125 TJ(°C)
Electrical characteristics
Figure 9: Transfer characteristics
ID
GIPG2606141243LM
(A)
28
VDS=17.5 V
24
20
16
12
8
4
0
0
24
6
8 10 VGS(V)
Figure 11: Capacitance variations
C
(pF)
GIPG2606141318LM
1000
Ciss
100
Coss
10
1
0.1
1
Crss
10
100 VDS(V)
Figure 13: Normalized V(BR)DSS vs. temperature
V(BR)DSS
(norm)
1.08
GIPG2606141424LM
ID=1 mA
1.04
1.00
0.96
0.92
0.88
-75 -25
25
75 125 TJ(°C)
DocID026641 Rev 5
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