STD16N50M2 Datasheet, PDF (5/21 Pages) STMicroelectronics – Extremely low gate charge

STD16N50M2, STF16N50M2, STP16N50M2
Table 8: Source-drain diode
Symbol
Parameter
Test conditions
Electrical characteristics
Min. Typ. Max. Unit
ISD
ISDM⁽¹⁾
VSD ⁽²⁾
trr
Qrr
IRRM
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
VGS = 0 V, ISD = 13 A
ISD = 13 A, di/dt = 100 A/µs,
VDD = 60 V
(see Figure 20: "Test circuit for
inductive load switching and
diode recovery times")
-
13 A
-
52 A
-
1.6 V
- 280
ns
- 2.85
µC
- 20.5
A
trr
Reverse recovery time
ISD = 13 A, di/dt = 100 A/µs,
- 388
ns
Qrr
Reverse recovery charge ^{VDD = 60 V, Tj = 150 °C}
(see Figure 20: "Test circuit for
-
4.5
µC
IRRM
Reverse recovery current ^{inductive load switching and}
diode recovery times")
- 21
A
Notes:
(1)_{Pulse width is limited by safe operating area.}
(2)_{Pulse test: pulse duration = 300 µs, duty cycle 1.5%.}
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