STB8N65M5 Datasheet, PDF (8/25 Pages) STMicroelectronics – N-channel 650 V, 0.56 Ω, 7 A MDmesh™ V Power MOSFET

Electrical characteristics
STB/D/F/I/P/U8N65M5
Figure 14. Normalized gate threshold voltage Figure 15. Normalized on resistance vs
vs temperature
temperature
VGS(th)
(norm)
1.10
AM08204v1
RDS(on)
(norm)
VGS=10V
ID=3.5A
AM08205v1
2.0
1.00
1.5
0.90
0.80
1.0
0.70
-50 -25 0 25 50 75 100 TJ(°C)
0.5
-50 -25 0 25 50 75 100 TJ(°C)
Figure 16. Switching losses vs gate resistance Figure 17. Normalized B_VDSS vs temperature
(1)
E
(μJ)
ID=4A
VCL=400V
VGS=10V
100
AM08206v1
Eoff
Eon
BVDSS
(norm)
1.07
1.05
1.03
1.01
ID=1mA
AM08203v1
0.99
10
0.97
1
0
10
20
30
40
1. Eon including reverse recovery of a SiC diode
RG(Ω)
0.95
0.93
-50 -25
0 25 50 75 100
TJ(°C)
8/25
Doc ID 16531 Rev 3