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STB8N65M5 Datasheet, PDF (4/25 Pages) STMicroelectronics – N-channel 650 V, 0.56 Ω, 7 A MDmesh™ V Power MOSFET
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Electrical characteristics
2
Electrical characteristics
STB/D/F/I/P/U8N65M5
(TC = 25 °C unless otherwise specified)
Table 4. On /off states
Symbol
Parameter
Test conditions
V(BR)DSS
Drain-source
breakdown voltage
ID = 1 mA, VGS = 0
IDSS
IGSS
VGS(th)
RDS(on
Zero gate voltage
VDS = Max rating
drain current (VGS = 0) VDS = Max rating, TC=125 °C
Gate-body leakage
current (VDS = 0)
VGS = ± 25 V
Gate threshold voltage VDS = VGS, ID = 250 µA
Static drain-source on
resistance
VGS = 10 V, ID = 3.5 A
Min. Typ. Max. Unit
650
V
1 µA
100 µA
100 nA
3
4
5
V
0.56 0.6 Ω
Table 5. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 100 V, f = 1 MHz,
VGS = 0
690
pF
-
18
- pF
2
pF
Co(er)(1)
Equivalent output
capacitance energy
related
VGS = 0, VDS = 0 to 520 V
-
17
- pF
Co(tr)(2)
Equivalent output
capacitance time
related
VGS = 0, VDS = 0 to 520 V
-
52
- pF
RG
Intrinsic gate
resistance
f = 1 MHz open drain
-
2.4
-
Ω
Qg
Total gate charge
VDD = 520 V, ID = 3.5 A,
Qgs Gate-source charge VGS = 10 V
Qgd Gate-drain charge
(see Figure 19)
15
nC
-
3.6
- nC
6
nC
1. Co(er) is a constant capacitance value that gives the same stored energy as Coss while VDS is rising from 0
to 80% VDSS
2. Co(tr) is a constant capacitance value that gives the same charging time as Coss while VDS is rising from 0
to 80% VDSS
4/25
Doc ID 16531 Rev 3
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